TIC226 series silicon triacs product information 1 april 1971 - revised march 1997 copyright ? 1997, power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . l 8 a rms, 70 a pea k l glass passivated wafe r l 400 v to 800 v off-state voltag e l max i g t of 50 ma (quadrants 1 - 3 ) mt1 mt2 g to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdc2aca 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted ) notes: 1. these values apply bidirectionally for any value of resistance between the gate and main terminal 1 . 2. this value applies for 50-hz full-sine-wave operation with resistive load. above 85c derate linearly to 110c case temperature at the rate of 320 ma/c . 3. this value applies for one 50-hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost . 4. this value applies for one 50-hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. surge may be repeated after the device has returned to original thermal equilibrium. during the surge, gate control may be lost . 5. this value applies for a maximum averaging time of 20 ms . ratin g symbo l valu e uni t repetitive peak off-state voltage (see note 1 ) TIC226d TIC226m TIC226s TIC226 n v dr m 400 600 700 80 0 v full-cycle rms on-state current at (or below) 85c case temperature (see note 2 ) i t(rms ) 8 a peak on-state surge current full-sine-wave (see note 3 ) i ts m 7 0 a peak on-state surge current half-sine-wave (see note 4 ) i ts m 8 0 a peak gate curren t i g m 1 a peak gate power dissipation at (or below) 85c case temperature (pulse width 200 m s ) p g m 2. 2 w average gate power dissipation at (or below) 85c case temperature (see note 5 ) p g(av ) 0. 9 w operating case temperature rang e t c -40 to +11 0 c storage temperature rang e t st g -40 to +12 5 c lead temperature 1.6 mm from case for 10 second s t l 23 0 c electrical characteristics at 25c case temperature (unless otherwise noted ) paramete r test condition s mi n ty p ma x uni t i dr m repetitive peak off-state curren t v d = rated v dr m i g = 0 t c = 110 c 2 m a i gt m peak gate trigger curren t v suppl y = +12 v ? v suppl y = +12 v ? v suppl y = -12 v ? v suppl y = -12 v ? r l = 10 w r l = 10 w r l = 10 w r l = 10 w t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s 2 -12 -9 2 0 50 -50 -50 m a v gt m peak gate trigger voltag e v suppl y = +12 v ? v suppl y = +12 v ? v suppl y = -12 v ? v suppl y = -12 v ? r l = 10 w r l = 10 w r l = 10 w r l = 10 w t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s t p(g ) > 20 m s 0.7 -0.8 -0.8 0. 9 2 -2 -2 2 v ? all voltages are with respect to main terminal 1 .
TIC226 serie s silicon triac s 2 april 1971 - revised march 199 7 product information ? all voltages are with respect to main terminal 1 . notes: 6. this parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body . 7. the triacs are triggered by a 15-v (open-circuit amplitude) pulse supplied by a generator with the following characteristics: r g = 100 w , t p(g ) = 20 m s, t r = 15 ns, f = 1 khz . v t m peak on-state voltag e i t m = 12 a i g = 50 m a (see note 6 ) 1. 6 2. 1 v i h holding curren t v suppl y = +12 v ? v suppl y = -12 v ? i g = 0 i g = 0 init? i t m = 100 ma init? i t m = -100 m a 5 - 9 30 -3 0 m a i l latching curren t v suppl y = +12 v ? v suppl y = -12 v ? (see note 7 ) 50 -5 0 m a dv/d t critical rate of rise of off-state voltag e v dr m = rated v dr m i g = 0 t c = 110 c 10 0 v/ s dv/d t (c ) critical rise of comm u - tation voltag e v dr m = rated v dr m i tr m = 12 a t c = 85 c 5 v/s thermal characteristic s paramete r mi n ty p ma x uni t r q j c junction to case thermal resistanc e 1. 8 c/ w r q ja junction to free air thermal resistanc e 62. 5 c/ w electrical characteristics at 25c case temperature (unless otherwise noted ) (continued ) paramete r test condition s mi n ty p ma x uni t typical characteristic s figure 1. figure 2. gate trigger current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i gt - gate trigger current - ma 01 1 10 100 1000 tc01aa case temperature vs v aa = 12 v r l = 10 w w t p(g) = 20 s v supply i gtm + + + - - - - + g a t e t r i g g e r v o l t a g e t c - c a s e t e m p e r a t u r e - c - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 v g t - g a t e t r i g g e r v o l t a g e - v 0 1 1 1 0 t c 0 1 a b c a s e t e m p e r a t u r e v s v s u p p l y i g t m + + + - - - - + v a a = 1 2 v r l = 1 0 w w t p ( g ) = 2 0 s
3 april 1971 - revised march 1997 TIC226 series silicon triacs product information typical characteristic s figure 3. figure 4. figure 5. figure 6. h o l d i n g c u r r e n t t c - c a s e t e m p e r a t u r e - c - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 i h - h o l d i n g c u r r e n t - m a 0 1 1 1 0 1 0 0 1 0 0 0 t c 0 1 a d c a s e t e m p e r a t u r e v s v s u p p l y + - v a a = 1 2 v i g = 0 i n i t i a t i n g i t m = 1 0 0 m a g a t e f o r w a r d v o l t a g e i g f - g a t e f o r w a r d c u r r e n t - a 0 0 0 0 1 0 0 0 1 0 0 1 0 1 1 v g f - g a t e f o r w a r d v o l t a g e - v 0 0 1 0 1 1 1 0 t c 0 1 a c g a t e f o r w a r d c u r r e n t v s i a = 0 t c = 2 5 c q u a d r a n t 1 l a t c h i n g c u r r e n t t c - c a s e t e m p e r a t u r e - c - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 i l - l a t c h i n g c u r r e n t - m a 1 1 0 1 0 0 1 0 0 0 t c 0 1 a e c a s e t e m p e r a t u r e v s v a a = 1 2 v v s u p p l y i g t m + + + - - - - + s u r g e o n - s t a t e c u r r e n t c o n s e c u t i v e 5 0 - h z h a l f - s i n e - w a v e c y c l e s 1 1 0 1 0 0 1 0 0 0 i t s m - p e a k f u l l - s i n e - w a v e c u r r e n t - a 1 1 0 1 0 0 t i 0 1 a a c y c l e s o f c u r r e n t d u r a t i o n v s n o p r i o r d e v i c e c o n d u c t i o n g a t e c o n t r o l g u a r a n t e e d t c 8 5 c
TIC226 serie s silicon triac s 4 april 1971 - revised march 199 7 product information typical characteristic s figure 7. figure 8. parameter measurement informatio n m a x r m s o n - s t a t e c u r r e n t t c - c a s e t e m p e r a t u r e - c 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 i t ( r m s ) - m a x i m u m o n - s t a t e c u r r e n t - a 0 1 2 3 4 5 6 7 8 9 1 0 t i 0 1 a b c a s e t e m p e r a t u r e v s m a x a v e r a g e p o w e r d i s s i p a t e d i t ( r m s ) - r m s o n - s t a t e c u r r e n t - a 0 2 4 6 8 1 0 1 2 1 4 1 6 p ( a v ) - m a x i m u m a v e r a g e p o w e r d i s s i p a t e d - w 0 4 8 1 2 1 6 2 0 2 4 2 8 3 2 t i 0 1 a c r m s o n - s t a t e c u r r e n t v s c o n d u c t i o n a n g l e = 3 6 0 a b o v e 8 a r m s t j = 1 1 0 c s e e i t s m f i g u r e v ac v mt2 i mt2 dut see note a r g c1 r1 i g v ac i mt2 v mt2 i g i trm dv/dt 10% 63% l1 v drm 50 hz pmc2aa note a: the gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. the pulse is timed so that the off-state-voltage duration is approximately 800 s. figure 9.
5 april 1971 - revised march 1997 TIC226 series silicon triacs product information to-220 3-pin plastic flange-mount packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . mechanical dat a to220 all linear dimensions in millimeters ? 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see note c see note b 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 version 2 version 1 notes: a. the centre pin is in electrical contact with the mounting tab. b. mounting tab corner profile according to package version. c. typical fixing hole centre stand off height according to package version. version 1, 18.0 mm. version 2, 17.6 mm. mdxxbe
TIC226 serie s silicon triac s 6 april 1971 - revised march 199 7 product information important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements . pi accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used . pi semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 1997, power innovations limite d
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